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Silicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor
  • Silicon Carbide SiC Coated Barrel SusceptorSilicon Carbide SiC Coated Barrel Susceptor

Silicon Carbide SiC Coated Barrel Susceptor

Semicorex minangka produsen independen Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite fokus ing Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP area manufaktur semikonduktor. Silicon Carbide SiC Coated Barrel Susceptor duwe kauntungan rega sing apik lan nutupi akeh pasar Eropa lan Amerika. We look nerusake kanggo dadi partner long-term ing China.

Kirim Pitakonan

Deskripsi Produk

SemicorexSilicon Carbide Kab Kab SiC CoatedPanrima Barelminangka produk grafit sing dilapisi SiC sing diresiki dhuwur, sing nduweni resistensi panas lan karat sing dhuwur. Iku cocok kanggo LPE. IngSilicon Carbide Kab KabSiC Coated Barrel Susceptor digunakake ing proses sing mbentuk lapisan epixial ing wafer semikonduktor, sing nduweni konduktivitas termal sing dhuwur, lan sifat distribusi panas sing apik banget.

Hubungi kita dina iki kanggo mangerteni sing luwih lengkap babagan kitaSilicon Carbide Kab KabSiC Coated Barrel Susceptor.


Parameter sakaSilicon Carbide Kab Kab SiC CoatedPanrima Barel

Spesifikasi Utama Lapisan CVD-SIC

SiC-CVD Properties

Struktur Kristal

Fase β FCC

Kapadhetan

g/cm³

3.21

Kekerasan

kekerasan Vickers

2500

Ukuran gandum

μm

2~10

Kemurnian Kimia

%

99.99995

Kapasitas panas

J kg-1 K-1

640

Suhu Sublimasi

2700

Kekuwatan Felexural

MPa (RT 4-titik)

415

Modulus Muda

Gpa (4pt bend, 1300 ℃)

430

Ekspansi Termal (C.T.E)

10-6K-1

4.5

Konduktivitas termal

(W/mK)

300


Fitur sakaSilicon Carbide Kab Kab SiC CoatedPanrima Barel

- Loro-lorone substrat grafit lan lapisan karbida silikon duwe kapadhetan sing apik lan bisa nduwe peran protèktif sing apik ing suhu dhuwur lan lingkungan kerja sing korosif.

- Susceptor dilapisi silikon karbida sing digunakake kanggo pertumbuhan kristal tunggal nduweni flatness permukaan sing dhuwur banget.

- Ngurangi prabédan ing koefisien expansion termal antarane landasan grafit lan lapisan silikon karbida, èfèktif nambah kekuatan iketan kanggo nyegah retak lan delamination.

- Loro-lorone substrat grafit lan lapisan silikon karbida duwe konduktivitas termal sing dhuwur, lan sifat distribusi panas sing apik.

- Titik leleh dhuwur, tahan oksidasi suhu dhuwur, tahan korosi.




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Kirim Pitakonan
Mangga bebas menehi pitakon ing formulir ing ngisor iki. Kita bakal mangsuli sampeyan ing 24 jam.
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